Search results for "Experimental proof"
showing 4 items of 4 documents
1990
Cryogenic nanoelectromechanical switch enabled by Bi2Se3 nanoribbons
2022
Abstract Nanoelectromechanical (NEM) switches are potential candidates for memory and logic devices for low standby-current and harsh environment applications. Cryogenic operation of these devices would allow to use them, e.g., in space probes and in conjunction with quantum computers. Herein, it is demonstrated that cryogenic application requirements such as good flexibility and conductivity are satisfied by using Bi2Se3 nanoribbons as active elements in NEM switches. Experimental proof of principle NEM switching at temperatures as low as 5 K is achieved in volatile and non-volatile reversible regimes, exhibiting distinct ON and OFF states, backed by theoretical modelling. The results open…
Bicyclo[6.1.0]nonine
1988
MNDO-Rechnungen zeigen, das fur die drei konstitutionsisomeren cis-Bicyclo[6.1.0]nonine (1–3) jeweils zwei energiearme, zueinander diastereomere Konformere a und b existieren. Zur experimentellen Uberprufung werden die mit der Selenadiazol-Methode oder durch Dehydrobromierung hergestellten, hoch gespannten Bicyclen mit Hilfe von 1H- und 13C-NMR-Messungen auf die Population der Konformeren und auf deren wechselseitige Umwandlung durch Inversion der Achtringe untersucht. Bicyclo[6.1.0]nonine MNDO calculations reveal that two diastereomeric conformations a and b of low energy exist for each of the three isomeric cis-bicyclo[6.1.0]nonynes (1–3). For the experimental proof, the highly strained b…
How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile
2021
Recent reports indicated that the use of an InAlN underlayer (UL) can significantly improve the efficiency of InGaN/GaN quantum well (QW) LEDs. Currently, this result is explained by considering that the UL reduces the density of nonradiative recombination centers in the QWs. However, an experimental proof of the reduction of defects in the QWs is not straightforward. In this paper, we use combined electrical (I-V), optical (L-I), capacitance (C-V), steady-state photocapacitance (SSPC) and light-assisted capacitance-voltage (LCV) measurements to explain why devices with UL have a much higher efficiency than identical LEDs without UL. Specifically, we demonstrated an improvement in both elec…